APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 1-7 q1 to q4 absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 0/vbus out cr6 cr5 neutral vbus e3 e4 g3 g1 g2 e2 q4 q3 g4 e1 q1 q2 g3 e3 g4 vbus g1 g2 e2 out neutral 0/vbus e1 e4 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 300 i c continuous collector current t c = 80c 200 i cm pulsed collector current t c = 25c 400 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 652 w rbsoa reverse bias safe operating area t j = 150c 400a @ 550v v ces = 600v i c = 200a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter trench + field stop igbt power module cr1 cr2 cr3 cr4
APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 2-7 all ratings @ t j = 25c unless otherwise specified q1 to q4 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 350 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 200a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 3 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 800 na q1 to q4 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 12.2 c oes output capacitance 0.78 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.38 nf q g gate charge v ge =15v, i c =200a v ce =300v 2.2 c t d(on) turn-on delay time 115 t r rise time 45 t d(off) turn-off delay time 225 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 200a r g = 1.8 55 ns t d(on) turn-on delay time 130 t r rise time 50 t d(off) turn-off delay time 300 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 200a r g = 1.8 70 ns t j = 25c 0.8 e on turn on energy t j = 150c 1.75 mj t j = 25c 5 e off turn off energy v ge = 15v v bus = 300v i c = 200a r g = 1.8 t j = 150c 7 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 1000 a r thjc junction to case thermal resistance 0.23 c/w
APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 3-7 cr1 to cr4 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 150c 400 a i f dc forward current tc = 80c 150 a t j = 25c 1.6 2 v f diode forward voltage i f = 150a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 7.2 q rr reverse recovery charge t j = 150c 15.2 c t j = 25c 1.7 e rr reverse recovery energy i f = 150a v r = 300v di/dt =2800a/s t j = 150c 3.6 mj r thjc junction to case thermal resistance 0.52 c/w cr5 & cr6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 150c 400 a i f dc forward current tc = 80c 200 a t j = 25c 1.6 2 v f diode forward voltage i f = 200a v ge = 0v t j = 150c 1.5 v t j = 25c 125 t rr reverse recovery time t j = 150c 220 ns t j = 25c 9.4 q rr reverse recovery charge t j = 150c 19.8 c t j = 25c 2.2 e rr reverse recovery energy i f = 200a v r = 300v di/dt =2800a/s t j = 150c 4.8 mj r thjc junction to case thermal resistance 0.39 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g
APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 4-7 sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructi ons for sp6 power modules on www.microsemi.com q1 to q4 typical performance curve hard switching 0 20 40 60 80 0 50 100 150 200 250 300 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =1.8 ? t j =150c t c =85c operating frequency vs collector current
APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 5-7 output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 50 100 150 200 250 300 350 400 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 50 100 150 200 250 300 350 400 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 50 100 150 200 250 300 350 400 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 i c (a) e (mj) v ce = 300v v ge = 15v r g = 1.8 ? t j = 150c eon eoff 0 2 4 6 8 10 12 14 0 2.5 5 7.5 10 12.5 15 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 200a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =1.8 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w)
APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 6-7 cr1 to cr4 typical performance curve energy losses vs collector current 0 1 2 3 4 5 0 50 100 150 200 250 300 i f (a) e rr (mj) v ce = 300v r g = 2.4 ? t j = 150c 0 1 2 3 4 0 2.5 5 7.5 10 12.5 15 gate resistance (ohms) e rr (mj) v ce = 300v i c = 150a t j = 150c switching energy losses vs gate resistance forward characteristic of diode t j =25c t j =150c 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w)
APTGT200TL60G APTGT200TL60G ? rev0 march, 2009 www.microsemi.com 7-7 cr5 & cr6 typical performance curve energy losses vs collector current 0 2 4 6 8 0 100 200 300 400 i f (a) e rr (mj) v ce = 300v r g = 1.8 ? t j = 150c 0 1 2 3 4 5 0 2.5 5 7.5 10 12.5 15 gate resistance (ohms) e rr (mj) v ce = 300v i c = 200a t j = 150c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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